Gene Fuller discusses Immersion Lithography in this 2004 panel. Topics covered include: Nikon’s early results in immersion lithography are covered. How long dry ArF will last in semiconductor production. How a new technology node ramps from early R&D to volume. The big question of immersion’s path. DoF improvement by multiples.
Gene Fuller and his views about the future of semiconductor lithography in 2003.
Lithography Panel: Gene Fuller of Nikon on Immersion vs. EUV at 32nm
Gene Fuller covers the latest progress in lithography at Nikon in both immersion ...
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Andre Auberton-Herve: President & CEO, Soitec: Soitec's SOI Roadmap
Phil Ware and his views about the future of semiconductor lithography in 2003.
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Lithography Panel 2005: Audience Q&A on... 32nm: Immersion or EUV?
Lithography Panel: Mick Fukuda of Canon on Immersion vs. EUV at 32nm
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